| 发明名称 |
MOSFET WITH RAISED STI ISOLATION SELF- ALIGNED TO THE GATE STACK |
| 摘要 |
A SEMICONDUCTOR STRUCTURE COMPRISING A TRANSISTOR (39, 139) HAVING A GATE CONDUCTOR (16, 116) THAT HAS FIRST AND SECOND EDGES BOUNDED BY RAISED ISOLATION STRUCTURES (30) (E.G. STI).A SOURCE DIFFUSION IS SELF-ALIGNED TO THE THIRD EDGE AND A DRAIN DIFFUSION IS SELF-ALIGNED TO THE FOURTH EDGE OF THE GATE ELECTRODE.(FIG 8)
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| 申请公布号 |
MY126357(A) |
申请公布日期 |
2006.09.29 |
| 申请号 |
MYPI9705548 |
申请日期 |
1997.11.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WENDLE P NOBLE;ASHWIN K GHATALIA;BADIH EL- KAREH |
| 分类号 |
H01L21/08;H01L21/336;H01L21/762;H01L21/8232;H01L27/08;H01L29/00;H01L29/76;H01L29/78 |
主分类号 |
H01L21/08 |
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