| 摘要 |
<p>THE PRESENT INVENTION DESCRIBES A METHOD OF FORMING A MASK COMPRISING : PROVIDING A SUBSTRATE (1100) , THE SUBSTRATE HAVING A FIRST THICKNESS; FORMING A BALANCING LAYER (1200) OVER THE SUBSTRATE, THE BALANCING LAYER HAVING A SECOND THICKNESS; FORMING AN ABSORBER LAYER (1300) OVER THE BALANCING LAYER, THE ABSORBER LAYER (1300) HAVING A FIRST REGION SEPARATED FROM A SECOND REGION BY A THIRD REGION; REMOVING THE ABSORBER LAYER (1300) IN THE FIRST REGION AND THE SECOND REGION; REMOVING THE BALANCING LAYER (1200) IN THE SECOND REGION; AND REDUCING THE SUBSTRATE (1100) IN THE SECOND REGION TO A THIRD THICKNESS.THE PRESENT INVENTION ALSO DESCRIBES A MASK (1000) COMPRISING; AN ABSORBER LAYER (1300) THE ABSORBER LAYER HAVING A FIRST OPENING (1310) AND A SECOND OPENING (1320), THE FIRST OPENING UNCOVERING A BALANCING LAYER (1200) DISPOSED OVER A SUBSTRATE (1100) HAVING A FIRST THICKNESS, AND THE SECOND OPENING UNCOVERING THE SUBSTRATE (1100) HAVING A SECOND THICKNESS. (FIG. 3)</p> |
