| 摘要 |
<PICT:0880559/III/1> A semi-conductor single crystal is grown by precipitating the material from a gas on a monocrystalline longitudinally extending seed crystal of the same material heated by an electric current flowing through it so that the surface is below the melting point of the substance and below the temperature at which a maximum quantity of the substance would be precipitated, the gas flowing turbulently over the surface of the seed and the conditions being such that all the precipitated substance is in single-crystal form. Hydrogen is passed through a vessel V containing a liquid silicon compound F, e.g. SiHCl3 or SiCl4, so that a gaseous mixture is passed through a nozzle D, which renders the flow turbulent, into a vessel R containing a seed crystal of silicon S. The seed crystal is heated by an electric current to a temperature of 950 DEG C., and silicon is deposited on the seed to form a single crystal, the speed of precipitation not exceeding 10 mg/h/cm2. |
