发明名称 FLASH MEMORY ARCHITECTURE EMPLOYING THREE LAYER METAL INTERCONNECT
摘要 The present invention discloses a memory wordline decoder that includes a plurality of pre-decoded address lines that are electrically connected with a global x-decoder. A sub x-decoder is electrically connected with the global x-decoder for receiving electrical control signals from the global x-decoder. A memory sector is electrically connected with the sub x-decoder. The global x-decoder selectively controls the sub x-decoder to select a plurality of wordlines in the memory sector. A vertical x-decoder is electrically connected with the global x-decoder and the sub x-decoder. The vertical x-decoder is used to select a predetermined wordline by the global x-decoder during operation.
申请公布号 KR100629987(B1) 申请公布日期 2006.09.29
申请号 KR20027002390 申请日期 2000.07.14
申请人 发明人
分类号 G11C16/06;G11C16/08;G11C8/10;G11C8/12;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/06
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