发明名称 SEMICONDUCTOR DEVICE AND MIM CASPACITOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a MIM capacitor having a high precision interdigital electrode. <P>SOLUTION: The MIM capacitor comprises a first and a second conductive pattern buried in a first interlayer insulating film and continuously extending in the first interlayer insulating film facing each other and composing a part of an interdigital capacitor pattern; and a third and a fourth conductive pattern buried in a second interlayer insulating film separately formed from the first interlayer insulating film with an interval of a via hole insulating film corresponding to the first and the second conductive pattern, continuously extending facing each other, and composing a part of the interdigital capacitor pattern. Further, a fifth conductive pattern continuously extending in the via hole insulating film corresponding to the first and the third conductive pattern and continuously connecting the first and the third conductive pattern, and a sixth conductive pattern continuously extending corresponding to the second and the fourth conductive pattern and continuously connecting the second and the fourth conductive pattern are buried in the via hole insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006261455(A) 申请公布日期 2006.09.28
申请号 JP20050078012 申请日期 2005.03.17
申请人 FUJITSU LTD 发明人 IIOKA OSAMU;FUKUOKA IKUTO
分类号 H01L27/04;H01L21/768;H01L21/822 主分类号 H01L27/04
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