| 摘要 |
A semiconductor integrated circuit includes a word line extending along a first direction, a first and a second N-well regions, a P-well region disposed between the first and the second N-well regions, a memory cell having a first, second, third, and fourth PMOS transistors, and a first and second NMOS transistors, the first and the second PMOS transistors disposed in the first N-well region along a second direction which is different from the first direction, the first and the second NMOS transistors disposed in the P-well region, and the third and the fourth PMOS transistors disposed in the second N-well region along the second direction.
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