| 摘要 |
In order to charge a pair of ferroelectric capacitors that constitute a memory cell, a voltage setting circuit sets a voltage difference between both ends of the ferroelectric capacitors to be lower than a coercive voltage in a read operation. A differential sense amplifier amplifies a voltage difference between bit lines generated in accordance with a difference in charging amounts of the ferroelectric capacitors. A voltage difference between both ends of the ferroelectric capacitor being charged is lower than the coercive voltage; accordingly, a polarization vector of the ferroelectric capacitor is inhibited from reversing. As a result, the ferroelectric material can be inhibited from deteriorating owing to the read operation, thereby eliminating the restriction on the number of times of read operations in the ferroelectric memory.
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