| 发明名称 |
Semiconductor device and process for producing the same |
| 摘要 |
A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.
|
| 申请公布号 |
US2006214224(A1) |
申请公布日期 |
2006.09.28 |
| 申请号 |
US20050553416 |
申请日期 |
2005.10.17 |
| 申请人 |
TADAHIRO OHMI |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU |
| 分类号 |
H01L21/283;H01L27/12;H01L21/04;H01L21/316;H01L21/318;H01L29/78 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
