发明名称 Semiconductor Chip and Method for Manufacturing the Same
摘要 A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 mum which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 mum which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
申请公布号 US2006214306(A1) 申请公布日期 2006.09.28
申请号 US20060420390 申请日期 2006.05.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;OHNO YUMIKO
分类号 H01L23/52;H01L25/18;H01L21/02;H01L21/336;H01L21/68;H01L21/77;H01L21/98;H01L25/065;H01L25/07;H01L27/00;H01L27/12;H01L29/04;H01L29/786 主分类号 H01L23/52
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