发明名称 Integrated circuit margin stress test system
摘要 Systems and methods are disclosed for testing a synchronous memory system by electrically stressing one or more electrical conditions of the component circuits; providing a Built-In Self-Test (BIST) controller to control the electrical stress during device testing; and providing a test stimuli during testing. In another aspect, the memory system testing includes setting a self-timed control input of the memory system to a predetermined self timed period value; and testing the memory based on the predetermined self timed period value.
申请公布号 US2006218455(A1) 申请公布日期 2006.09.28
申请号 US20050089300 申请日期 2005.03.23
申请人 SILICON DESIGN SOLUTION, INC. 发明人 LECLAIR KEVIN R.;WIK THOMAS R.;LE CHUONG T.;NGUYEN HIEU D.;TRAN DUYTAN K.;BLIGH KEVIN O.
分类号 G01R31/28 主分类号 G01R31/28
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