发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
To suppress occurrence of defects in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
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申请公布号 |
US2006214254(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20060443226 |
申请日期 |
2006.05.31 |
申请人 |
ISHITSUKA NORIO;IWASAKI TOMIO;OHTA HIROYUKI;MIURA HIDEO;TAKAHASHI MASAHITO;SUZUKI NORIO;IKEDA SHUJI;TANAKA HIDEKI;MIMA HIROYUKI |
发明人 |
ISHITSUKA NORIO;IWASAKI TOMIO;OHTA HIROYUKI;MIURA HIDEO;TAKAHASHI MASAHITO;SUZUKI NORIO;IKEDA SHUJI;TANAKA HIDEKI;MIMA HIROYUKI |
分类号 |
H01L29/00;H01L29/78;H01L21/28;H01L21/762;H01L21/8234;H01L21/8247;H01L27/105 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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