发明名称 HIGH-FREQUENCY TRANSMISSION LINE
摘要 <P>PROBLEM TO BE SOLVED: To fabricate a high-frequency transmission line such as a microstrip line without using a dielectric layer even in a semiconductor integrated circuit board, especially, a silicon integrated circuit board with respect to the high-frequency transmission line. <P>SOLUTION: The high-frequency transmission line is provided with a ground electrode 13 formed on a semiconductor substrate 11; and a transmission line 15 opposing the ground electrode 13 with a gap sandwiched, and supported by a line supporter 17 on the surface opposite to the opposing surface with a line supporter insulating layer 16 sandwiched. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006261615(A) 申请公布日期 2006.09.28
申请号 JP20050080704 申请日期 2005.03.18
申请人 FUJITSU LTD 发明人 ONO KATSUJI
分类号 H01L21/822;H01L21/3205;H01L23/52;H01L27/04;H01P3/08 主分类号 H01L21/822
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