| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer surface protection film that is capable of preventing breakage in a semiconductor wafer even when it is as thin as 200μm or less, and to provide a protection method for semiconductor wafers using this protection film. SOLUTION: A film is 5.0 to 50.0 MPa in breaking strength both in the machine direction (MD) and in the transverse direction (TD). Either side of the film is irradiated with an electron beam or plasma, and the quality of its surface is thereby modified to obtain a base film with enhanced heat resistance. The surface (on the side opposite the modified surface) of the base film is coated with adhesive to obtain the adhesive film for semiconductor wafer surface protection. The semiconductor wafer surface protection method makes it possible to carry out a series of semiconductor manufacturing flows with a single adhesive film. COPYRIGHT: (C)2006,JPO&NCIPI |
