| 摘要 |
PROBLEM TO BE SOLVED: To achieve flash lamp annealing method that does not damage a Si wafer. SOLUTION: A light source is disposed above a substrate including a single crystal semiconductor region, the substrate is heated by the light radiated from the light source, and the 1/2 pulse width of the light source is set at 1 millisecond or less. COPYRIGHT: (C)2006,JPO&NCIPI
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