| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor thin film capable of obtaining high electron mobility even forming at a low temperature, a semiconductor device using the semiconductor thin film, and a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device comprises a step of forming an island-shaped semiconductor film 3 on a substrate 1, a step of coating the semiconductor film with a separating film 4, and surrounding the side surface of the semiconductor film with a heat reserving film 5 via the separating film, and a step of irradiating the semiconductor film with an energy beam from the upper surface side to crystallize the semiconductor film for forming an active semiconductor film 11. COPYRIGHT: (C)2006,JPO&NCIPI
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