SILICON-ON-NOTHING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SON (Silicon-On-Nothing) MOSFET and its manufacturing method which can improve demerits of bulk structure and SOI structure simultaneously by forming a blister within a silicon substrate. SOLUTION: The transistor comprises element isolation insulating films formed on upper both sides of the silicon substrate; a gate insulating film and a gate electrode formed on a silicon substrate surface between the element isolation insulating films in order; a source region and a drain region which are formed in a silicon substrate upper portion between the gate insulating film and the element isolation insulating film; the blister formed within the silicon substrate of a gate insulating film lower portion; and a silicon channel within the silicon substrate which is surrounded by the blister, and the source and drain regions. The blister is formed of hydrogen or helium ions. COPYRIGHT: (C)2006,JPO&NCIPI