| 发明名称 |
METHOD FOR MANUFACTURING THIN FILM THERMISTOR AND THIN FILM THERMISTOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film thermistor in which occurrence of self-heating is suppressed and mechanical damage such as deformation or cracking is eliminated, and to provide a thin film thermistor. SOLUTION: The method for manufacturing a thin film thermistor comprises a sputtering step for forming an Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>or Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>-Fe<SB>2</SB>O<SB>3</SB>based composite metal oxide film having a thickness of 0.2-1.0μm on an SiO<SB>2</SB>layer 3 under a state heated at 550-650°C. COPYRIGHT: (C)2006,JPO&NCIPI
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| 申请公布号 |
JP2006261655(A) |
申请公布日期 |
2006.09.28 |
| 申请号 |
JP20060037739 |
申请日期 |
2006.02.15 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
ISHIGAMI SHUNICHIRO;YAMAGUCHI KUNIO |
| 分类号 |
H01C7/04 |
主分类号 |
H01C7/04 |
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