| 摘要 |
PROBLEM TO BE SOLVED: To constitute gate electrodes of a single crystal semiconductor of high crystallinity by a simple manufacturing process concerning a method of manufacturing an insulated gate type semiconductor apparatus. SOLUTION: After ion-injecting an element 5 for exfoliation to the single crystal semiconductor substrate 4 for pasting, the single crystal semiconductor substrate 4 for pasting is pasted to a single crystal semiconductor substrate 1 for forming an element having an insulating film 3 formed thereon, so that the ion-injecting side of the single crystal semiconductor substrate 4 for pasting may be a pasting surface. Next, thermal treatment is carried out and the single crystal semiconductor substrate 4 for pasting is exfoliated in the vicinity of the concentration peak position of the injected element. Thereafter, the remaining part 6 of the single crystal semiconductor substrate 4 for pasting remaining on the side of the single crystal semiconductor substrate 1 for forming an element is etched in the state of the gate electrodes. COPYRIGHT: (C)2006,JPO&NCIPI
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