| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which stable multi-level data storage and high speed read can be performed. <P>SOLUTION: The semiconductor memory device has a memory cell array constituting pair cells in which memory cells in which a plurality of physical quantity levels can be set are arranged and two memory cells selected simultaneously are data storage unit, one of physical quantity levels of N (N: integer of 3 or more) pieces is set to each memory cell, each pair cell stores M value data (M>N) indicated by M=2<SP>n</SP>(n: integer of 2 or more) decided by a combination state in which physical quantity levels of two memory cells constituting it are different and difference of physical quantity levels are different. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
