| 摘要 |
PROBLEM TO BE SOLVED: To ensure a more excellent high speed response characteristic by reducing parasitic capacitance of an element while securing the reliability of the element. SOLUTION: The semiconductor device comprises a first cladding layer 2; an active layer 4; a second cladding layer 7; a mesa structure 30 including a first protective layer 6A and a second protective layer 6B for covering respective side surfaces of the active layer and a cap layer 5 formed between the first protective layer and the second protective layer, for covering an upper surface of the active layer and permitting aluminum to be involved only in the active layer; and embedding layers 9A, 9B for embedding the mesa structure, the first cladding layer, the first protective layer, the second protective layer, and the second cladding layer constituting the side surfaces of the mesa structure. COPYRIGHT: (C)2006,JPO&NCIPI
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