发明名称 SUBSTRATE-TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of an oxide protection film in a metal heating element in a substrate-treating device in which the metal heating element is used in an inert gas atmosphere, and to lengthen the lifetime of the metal heating element. SOLUTION: The substrate-treating device has: a treatment chamber 17 for treating a substrate 105; and a heating means 102 which surrounds the treatment chamber, and has the metal heating element 108 for heating the inside of the treatment chamber. In the device, the space 124 between the treatment chamber and the heating means is set to an inert gas atmosphere, treatment gas is introduced into the treatment chamber, and is exhausted for treating the substrate. In the substrate-treating device, the space is substituted for atmosphere containing at least oxygen, and heat is generated in the metal electrical heating element in the atmosphere for forming an oxide film on the surface of the metal electrical heating element. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006261362(A) 申请公布日期 2006.09.28
申请号 JP20050076369 申请日期 2005.03.17
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIMADA SHINICHI;TSUKAMOTO HIDEYUKI;OKA TAKENORI;HAYASHIDA AKIRA
分类号 H01L21/324;H05B3/12 主分类号 H01L21/324
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