| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device for enabling high output operation by reducing a collapse phenomenon without the separation of an insulating layer from a semiconductor layer. SOLUTION: The semiconductor device comprises a GaN system semiconductor layer 11 formed on a substrate 10, and a silicon nitride film layer formed on the GaN system semiconductor layer to have a silicon/nitrogen composition ratio of 0.8 to 2.5 or an aluminum nitride film layer 20 having an aluminum/silicon composition ratio of 1.0 to 2.5. The manufacturing method of the semiconductor device can improve close contact between the insulating layer and the semiconductor layer by selecting a composition of the silicon nitride layer formed on the semiconductor layer, prevent the separation of the insulating film layer from the surface of semiconductor layer, and reduce the collapse phenomenon. COPYRIGHT: (C)2006,JPO&NCIPI
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