| 摘要 |
PROBLEM TO BE SOLVED: To reduce junction leakage current in a boundary between an element isolation film and a diffusion layer without any increase in area of an element formation region at the time of forming a silicide film on the diffusion layer. SOLUTION: In a silicon substrate 101, a trench-type isolation 105 is formed as an element isolation region for marking off the silicon substrate into many element formation regions. The surface of the isolation 105 is lower than that of the silicon substrate 101 in the element formation regions, and hence there is a difference in level having a predetermined vertical interval between these two surfaces. In the element formation regions demarcated by the isolation 105, a diffusion layer region 111 is formed, and a diffusion layer electrode 113b is formed thereon. The diffusion layer electrode is so formed as to contain the top face of the edge of the boundary in the diffusion layer region, but not contain the top face of the edge of the boundary in the trench-type element isolation region, and so is separated from the isolation. On the side face of the step between the isolation 105 and the element formation regions, a step side wall 106 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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