| 摘要 |
PROBLEM TO BE SOLVED: To reduce a size, increase a capacity, and facilitate manufacturing processes. SOLUTION: The organic ferroelectric memory 1000 comprises a driving circuit 180 including a first thin-film transistor 110, and a memory cell 182 including a second thin-film transistor 150 and a ferroelectric capacitor 160. The second thin-film transistor 150 comprises source and drain electrodes 140 and 142, an organic semiconductor layer 144, a gate insulation layer 146, and a gate electrode 148. The ferroelectric capacitor 160 comprises a bottom electrode 162, an organic ferroelectric layer 164, and a top electrode 166, and is electrically connected to either of the source and drain electrodes 140 and 142. The memory cell 182 is stacked above the driving circuit 180. COPYRIGHT: (C)2006,JPO&NCIPI
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