发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To enable realizing high speed operation and low power consumption, and also to realize an effective test for evaluating reliability. SOLUTION: In a normal mode, a voltage drop circuit 43 gives large internal power source voltage intVccp to peripheral circuits, a voltage drop circuit 45 gives small internal power source voltage intVcca to a memory cell array. thereby, high speed operation and low power consumption can be realized. At the time of burn-in test, an external power source voltage supply line 51 and internal power source voltage supply lines 53, 55 are connected. Thereby, external power source voltage extVcc is given directly to the internal power source voltage supply lines 53, 55. Thereby, the effective burn-in test can be performed. Further, at the time of the burn-in test, the voltage drop circuits 43, 45 are made non-activation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006260766(A) 申请公布日期 2006.09.28
申请号 JP20060132921 申请日期 2006.05.11
申请人 RENESAS TECHNOLOGY CORP 发明人 MORISHITA GEN;TSUKIDE MASAKI;ARIMOTO KAZUTAMI
分类号 G11C29/06;G01R31/28;G11C11/401 主分类号 G11C29/06
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