| 摘要 |
The present semiconductor device comprises pillar layers formed on a semiconductor substrate, the pillar layers comprising a first semiconductor pillar layer of a first conductivity type and a second semiconductor pillar layer of a second conductivity type which both have a strip cross section and are alternately formed on the semiconductor surface. A semiconductor base layer of the second conductivity type is selectively formed on one of the first semiconductor pillar layer and second semiconductor pillar layer. The semiconductor base layer has a flat impurity profile. |
