SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING THEM

摘要

A semiconductor light emitting element (10) is provided with a lower side semiconductor clad layer (24) made of n-type GaN, a semiconductor active layer (30) made of InGaN, and a layer structure (26) of an upper side semiconductor clad layer made of p-type GaN. A bandgap of the semiconductor active layer (30) is formed narrower than a bandgap of the lower side semiconductor clad layer (24) and a bandgap of the upper side semiconductor clad layer (26). Furthermore, the bandgap of the semiconductor active layer (30) is characterized in that it is changed in a thickness direction.