NONSTOICHIOMETRIC METAL OXIDE

摘要

PROBLEM TO BE SOLVED: To provide a stable method for manufacturing a nonstoichiometric metal oxide by solving such a problem that a stable production method of a nonstoichiometric metal oxide is not established and quantitative properties of the nonstoichiometric metal oxide as a semiconductor are unknown although it is known that a nonstoichiometric metal oxide of a oxygen excess type exhibits properties as a p-type semiconductor and a nonstoichiometric metal oxide of a oxygen deficiency type exhibits properties as a n-type semiconductor, and to provide a new industrial application of the nonstoichiometric metal oxide manufactured by the method.

SOLUTION: A p-type semiconductor of the oxygen excess type and an n-type semiconductor of the oxygen deficiency type, being each a nonstoichiometric metal oxide, can be stably manufactured by a combustion synthesis method. A thermoelectric power generating material having excellent cost performance and heat resistance is obtained by constituting a module by using the oxygen deficiency type metal oxide as an n-type element of the thermoelectric power generating material and the oxygen excess type metal oxide as a p-type element of the thermoelectric power generating material.

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