| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for easily forming the bonding agent layer of the semiconductor device including a hollow structure in the uniform thickness. SOLUTION: The manufacturing method of semiconductor device comprises steps of: reforming the part to form the bonding agent layer 3 of the semiconductor device including the hollow structure; laminating the surface of the bonding agent layer 3 of a sheet 14, where the bonding agent layer 3 is formed uniformly, to the surface of the reformed part; and peeling the sheet 14 off from the reformed part of the semiconductor device, and uniformly forming the uniform bonding agent layer 3 to the reformed part. With this method, the uniform bonding agent layer 3 is formed only to the reformed part; and the process is completed within a short period of time with the three steps of the reforming, bonding, and peeling. Accordingly, this manufacturing method effectively solves the problems of quality, working efficiency, and manufacturing cost which have been left as the unsolved problem. COPYRIGHT: (C)2006,JPO&NCIPI |
