| 摘要 |
PROBLEM TO BE SOLVED: To relate to a method for manufacturing a semiconductor device. SOLUTION: In order to achieve a high carrier mobility in an active region of a semiconductor device, germanium atoms are fired at the surface of a semiconductor substrate to form a layer including germanium inside the semiconductor substrate. Then, the portion from the surface of the semiconductor substrate to the top part of the layer including germanium, including the top part of the layer including germanium is oxidized and the fired germanium atoms are pushed into the semiconductor substrate from the surface. Due to this, the germanium concentration is increased inside the layer including germanium except for the oxidized top part and a layer with a high germanium concentration is formed inside the semiconductor substrate. By arranging the active region of the semiconductor device at least at a part inside the layer with a high germanium concentration, the semiconductor device is manufacture. COPYRIGHT: (C)2006,JPO&NCIPI
|
