发明名称 |
SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a method for manufacturing the same. SOLUTION: A split gate memory device of the present invention has a structure in which a floating gate coupling ratio has increased, and as a result, the efficiency and performance of programs and deletion operation are improved. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006261668(A) |
申请公布日期 |
2006.09.28 |
申请号 |
JP20060067961 |
申请日期 |
2006.03.13 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JEON HEE-SEOG;KANG SUNG-TAEG;YOON SEUNG-BEOM;HAN JEONG-UK;KIN RYUTAI;SEO BO-YOUNG;KWON HYOK-KI |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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