发明名称 SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a method for manufacturing the same. SOLUTION: A split gate memory device of the present invention has a structure in which a floating gate coupling ratio has increased, and as a result, the efficiency and performance of programs and deletion operation are improved. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006261668(A) 申请公布日期 2006.09.28
申请号 JP20060067961 申请日期 2006.03.13
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEON HEE-SEOG;KANG SUNG-TAEG;YOON SEUNG-BEOM;HAN JEONG-UK;KIN RYUTAI;SEO BO-YOUNG;KWON HYOK-KI
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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