THIN FILM FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To facilitate storage of an electric charge into a channel on a gate insulating film to realize a high frequency characteristic in an organic thin film transistor. SOLUTION: The thin film field effect transistor comprises: a substrate 110; a gate electrode 111 provided on the substrate; a gate insulating film 112 provided on the gate electrode; a first organic electronic material film 113 that is provided on the gate insulating film, and contains a first organic electronic material; a second organic electronic material film 130 that is provided on the first organic electronic material film, and contains a second organic electronic material and an electron-acceptive or electron-donative material; and a source electrode 115 and a drain electrode 114 separately provided in electrical contact with the first organic electronic material film, and/or the second organic electronic material film. COPYRIGHT: (C)2006,JPO&NCIPI