| 摘要 |
PROBLEM TO BE SOLVED: To enhance fabrication yield of semiconductor device by preventing adhesion of foreign matters such as fine particles onto a semiconductor wafer. SOLUTION: In a plasma CVD system 1 comprising a processing chamber 2 connected with a vacuum pump 8a, a carrying chamber 4 connected with a vacuum pump 8b and a mass flow controller 9, and a gate valve 3a between the processing chamber 2 and the carrying chamber 4, pressure of the carrying chamber 4 is controlled by inert gas from the mass flow controller 9 and raised above pressure of the processing chamber 2 before the gate valve 3a is opened. COPYRIGHT: (C)2006,JPO&NCIPI
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