| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance organic thin film transistor employing an organic semiconductor film having a thiophene frame. SOLUTION: The organic thin film transistor 10 comprises a substrate 1, a gate electrode 2, a gate insulation film 3, an organic semiconductor film 4, a source electrode 5, a drain electrode 6, and metal particles 7. The gate electrode 2 applies an electric field for generating an electric field in the film thickness direction of the organic semiconductor film 4 through the gate insulation film 3. The organic semiconductor film 4 is composed of an organic semiconductor material having a thiophene frame. In the organic thin film transistor 10, the metal particles 7 are arranged on one major surface of the organic semiconductor film 4 between the source electrode 5 and the drain electrode 6. COPYRIGHT: (C)2006,JPO&NCIPI
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