| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a multilayer thin film whereby the generations of cross-contaminations are prevented in the manufacture of the multilayer thin film having a hetero-structure of so laminating therein differen kinds of semiconductors, etc. as to join them to each other, and the compositive change in the interface between heterojunctions is made further more steep than conventional ones. SOLUTION: The manufacturing apparatus of the multilayer thin film has: (a) a reacting chamber 20 surrounded by a peripheral wall; (b) a rotational body 50 having a rotatable substrate mounting portion 80 provided in the nearly center of the reacting camber 20; (c) two or more barrier plates 71, 72, 73, 74 fastened to the rotational body 50 and so disposed as to traverse the space between the rotational body 50 and the peripheral wall of the reacting chamber 20; and (d) a gas introducing means 35 for introducing respectively differen reacting gases into a plurality of reactors formed out of the peripheral wall of the reacting chamber 20, the rotational body 50, and the barrier plates 71, 72, 73, 74. COPYRIGHT: (C)2006,JPO&NCIPI
|
