| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element and the manufacturing method thereof wherein its operating current Iop is made stable. SOLUTION: The semiconductor laser element has: a substrate 11; a first clad layer 12 formed on the principal surface of the substrate 11; an active layer 14 formed above the first clad layer 12; a second clad layer 19 formed above the active layer 14 whose top is so processed as to be a stripe-form ridge waveguide 18; a contact layer 20 formed on the top surface of the ridge waveguide 18; an insulation film 21 formed on the top of the second clad layer wherefrom the top surface of the contact layer 20 is excluded; a hydrogen-impermeability film 22 so formed as to cover the top surface and both the side surfaces of the ridge waveguide 18; hydrogen adding regions 23, 24 formed in the portions of the second clad layer 19 which are present on both the sides of the ridge waveguide 18; and electrodes 25, 26 for bringing the active layer 14 into an electric continuity. COPYRIGHT: (C)2006,JPO&NCIPI
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