| 摘要 |
PROBLEM TO BE SOLVED: To achieve a silicon wafer having the optimum DZ width and oxygen deposit density for a device to contribute to enhanced performance of the device by enabling to control the DZ width and the oxygen deposit density separately in a silicon wafer processing method and equipment for carrying out the same. SOLUTION: While irradiating infrared rays having a wavelength of not less than 7μm nor more than 25μm on a silicon wafer 4 containing oxygen from an infrared rays irradiation source 3, the silicon wafer 4 is heated up to room temperature or higher by means of a heating source 2 consisting of a flush lamp. COPYRIGHT: (C)2006,JPO&NCIPI
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