THIN FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a thin film semiconductor device in which a crack-free polycrystalline silicon film thicker than before is formed on a substrate of different kind such as a glass substrate. SOLUTION: The thin film semiconductor device has a polycrystalline silicon film formed directly on a glass substrate wherein the average crystal grain area is 80 squareμm or above. It is obtained by irradiating an amorphous silicon film with an area 13 of weak laser light intensity and then irradiating it with an area 14 of strong laser light intensity when the polycrystalline silicon film is scanned with a laser beam and rendered to the polycrystalline silicon. COPYRIGHT: (C)2006,JPO&NCIPI