| 摘要 |
PROBLEM TO BE SOLVED: To employ a structure capable of preventing complication of a manufacturing process of a vertical resonator type surface-emitting semiconductor laser device when a configuration in which an active layer of the vertical resonator type surface-emitting semiconductor laser device is excited by an external excitation light is employed. SOLUTION: The vertical resonator type surface-emitting semiconductor laser device having a resonator structure sandwiched up and down with a multilayer reflection mirror on a substrate has an active region to be excited by an external excitation light in the resonator structure. The external excitation light has a wavelength which is shorter than a resonant mode wavelength of the resonator structure, and is in a high reflection rate band of the multilayer film reflection mirror. In this device, the incident angle of the external excitation light can be set so that the wavelength of the external excitation light may match the wavelength of an apparent resonant mode having been shortened, by utilizing the fact that the apparent resonant mode in the resonator structure shifts to a short wavelength when the incident angle of the external excitation light into the resonator structure is gradually shifted from a vertical incident direction to a side surface direction. COPYRIGHT: (C)2006,JPO&NCIPI
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