| 摘要 |
PROBLEM TO BE SOLVED: To provide a defective inspection technique for detecting a shortcircuit and a leakage of a wafer including a pattern of small capacitance as a technique of inspecting the wafer in the mid point of the semiconductor manufacturing process. SOLUTION: The method of inspecting the wafer is composed of the following processes: the process for charging a polarity so as to accumulate charges on the pattern of small capacitance by irradiating the wafer including the pattern of small capacitance with a prescribed amount of electron beam; the process for acquiring secondary electron image emitted from the pattern before leaching the equilibrium state of the electrified voltage of the pattern; the process for acquiring the potential contrast signal based on the detected secondary electron signal; and the inspection process for detecting the difference of pattern capacities by comparing potential contrast signals obtained from the 1st, and 2nd regions on the wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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