| 摘要 |
A Pt film ( 24 ), a PLZT film ( 25 ), and a top electrode film ( 26 ) are formed above a semiconductor substrate ( 11 ). Next, the top electrode film ( 26 ) is patterned. Then, a PLZT film ( 27 ) covering an exposed portion of the PLZT film ( 25 ) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film ( 25 ). Heat treatment is not performed between patterning of the top electrode film ( 26 ) and formation of the PLZT film ( 27 ). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film ( 25 ) and the Pt film ( 24 ).
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