发明名称 Variable breakdown characteristic diode
摘要 A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.
申请公布号 US2006214183(A1) 申请公布日期 2006.09.28
申请号 US20050087000 申请日期 2005.03.22
申请人 SPANSION LLC 发明人 GAUN DAVID;BILL COLIN S.;KAZA SWAROOP
分类号 H01L29/00 主分类号 H01L29/00
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