发明名称 |
METHOD FOR FORMING BURIED DOPED REGION |
摘要 |
A method for forming a buried doped region is provided. A first insulating layer is formed on a substrate and the first insulating layer is patterned to from an opening that extends in a first direction. A buried doped region is formed in the substrate exposed by the opening. Thereafter, a second insulating layer is formed on the substrate to fill the opening. The second insulating layer together with the first insulation layer form a third insulating layer. The third insulating layer is patterned to form an isolation layer that exposes the substrate and the buried doped region. The isolation layer extends in a second direction and crosses over the first direction. A semiconductor layer is formed on the substrate to fill the areas on the respective sides of the isolation layer.
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申请公布号 |
US2006216915(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20050163728 |
申请日期 |
2005.10.28 |
申请人 |
HUANG CHIU-TSUNG;CHANG SU-YUAN |
发明人 |
HUANG CHIU-TSUNG;CHANG SU-YUAN |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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