| 摘要 |
A method for manufacturing magnetic field detection devices is described, said method comprising the operations of manufacturing a magneto-resistive element ( 10; 20 ) comprising regions with metallic conduction ( 13; 23 ) and regions with semi-conductive conduction ( 11; 31 ). Said method comprises the following operations:-forming metallic nano-particles ( 37 ) to obtain said regions with metallic conduction ( 13; 23 );-providing a semiconductor substrate ( 31 );-applying said metallic nano-particles ( 37 ) to said semiconductor substrate ( 31 ) to obtain a disordered mesoscopic structure. A magnetic device is also described, comprising a spin valve, said spin valve ( 110 ) comprising a plurality of layers ( 111, 112, 113, 114, 115, 116, 117 ) arranged in a stack which in turn comprises at least one free magnetic layer ( 111 ) able to be associated to a temporary magnetisation (MT), a spacer layer ( 133 ) and a permanent magnetic layer ( 112 ) associated to a permanent magnetisation (MP). The spacer element ( 133 ) is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the method for manufacturing magnetoresistive elements of the invention.
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