| 摘要 |
A power semiconductor element (52) and a capacitor (46) have their electrodes joined to each other in a module. The power semiconductor element (52) is formed on a semiconductor substrate having first and second main surfaces. A power semiconductor module (11A) includes an electrode (48) through which a main current flows, joined to the first main surface, an electrode (60) through which the main current flows, joined to the second main surface, and a resin portion (70) sealing the semiconductor substrate, the capacitor (46) and the electrodes (48, 60). The capacitor includes electrodes (42, 44). The electrode of the capacitor and the electrode of the semiconductor element are joined to each other by solder (62) such that surfaces exposed through the resin portion are arranged on one continuous surface on which a cooler can be attached. Therefore, a power semiconductor module can be provided in which the capacitor and the power semiconductor element can effectively be cooled and the surge voltage can be reduced. |
