| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and an LED array capable of reducing influence to device characteristics even if a conductive epitaxial defect or the like is present on a semiconductor wafer. <P>SOLUTION: The semiconductor device has a substrate 101, a semiconductor layer 102 of a first conductivity type provided on the substrate 101, a first semiconductor layer 105 of a second conductivity type formed on the semiconductor layer 102 of the first conductivity type, an interlayer insulation film 104 covering the semiconductor layer 102 of the first conductivity type, the bonding pad 109 of the second conductivity type provided on the interlayer insulation film 104 and electrically connected with the first semiconductor layer 105 of the second conductivity type, bonding pads 111 and 112 of the first conductivity type provided on the interlayer insulation film 104 and electrically connected with the semiconductor layer 102 of the first conductivity type, and a second semiconductor layer 106 of the second conductivity type formed in a region under the bonding pads 109, 111 and 112 of the first and second conductivity types and under the interlayer insulation film 104. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
