| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive thin-film transistor having little OFF-state current and little variation in an ON-state current. SOLUTION: This thin-film transistor comprises a gate electrode 2 for controlling the transistor current, a source electrode 5 for giving a current flowing through a channel portion, a drain electrode 6 for extracting the current flowing through the channel, and the channel 40 of a region through which the current flows. This channel 40 comprises a plurality of isolated and divided regions i.e. semiconductor layers 40a, 40a, 40a. COPYRIGHT: (C)2006,JPO&NCIPI |
