| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a copper oxide is sufficiently removed from copper wiring and an insulating film for preventing the diffusion of a water content and Cu can be made of a low-dielectric-constant insulating material, and to provide its manufacturing method. SOLUTION: The manufacturing method includes a step where copper wiring wherein a copper oxide film is formed on its surface is coated with a composition for forming an insulating film that contains a silicon compound having a diffusion barrier property against copper and an organic compound for reducing a copper oxide, and a step where the copper oxide film is reduced by the organic compound and removed by heat treatment and the silicon compound is cured to form an insulating film made of a silicon compound. COPYRIGHT: (C)2006,JPO&NCIPI
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