| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a thin film in which the interface property of a silicon substrate and a silicon oxide film is good, and which produces the thin film with good low interface trap density. SOLUTION: The method of forming the thin film which generates a plasma formed within a vacuum container and generating active species (radical), and depositing the silicone oxide film to the silicon substrate by this active species and material gas includes the steps of bringing the active species (radical) into contact with the material gas for the first time within the vacuum container; introducing a gas containing nitrogen atom in addition to the above material gas into a depositing treatment space where a silicon oxide film formation of up to the silicon substrate by both reactions; introducing the gas containing the nitrogen atom in addition to the material gas; and regulating so that the flow rate of the gas containing the nitrogen gas atom, while depositing the silicone oxide film to the silicon substrate at least becomes the maximum at the time of depositing the origination of the silicone oxide film to the silicon substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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