Semiconductor device and fabrication method therefor, capacitive element and fabrication method therefor, and MIS type semiconductor device and fabrication method therefor

摘要

A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.